PHOTODETECTION, SELF AMPLIFICATION AND DEMUX OPERATION IN TANDEM AMORPHOUS SI-C DEVICES

Abstract

In this paper we report the use of a monolithic system that combines the demultiplexing operation with the simultaneous photodetection and self amplification of the signal. The device is a double pi’n/pin a-SiC:H heterostructure with optical gate connections for light triggering in different spectral regions. Results show that when a polychromatic combination of different pulsed channels impinges on the device the output signal has a strong nonlinear dependence on the light absorption profile, (wavelength, bit rate and intensity). This effect is due to the self biasing of the junctions under unbalanced light generation of carriers. Self optical bias amplification under uniform irradiation and transient conditions is achieved. An optoelectronic model based on four essential elements: a voltage supply, a monolithic double pin photodiode, optical connections for light triggering, and optical power sources for light bias explains the operation of the optical system.